A recent study, affiliated with South Korea’s Ulsan National Institute of Science and Technology (UNIST) has reported a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, namely PtTe2.
Developing cheaper, smaller, and better-performing semiconductors with materials other than silicon (Si), is expected to gain momentum, thanks to a recent study from UNIST. This will aid in reducing the space between semiconductors and metals within semiconductor devices to ∼1 nm, which could help maintain high performance.
Published in the August 2022 issue of Nature Communications, this study has been jointly led by Professor Soon-Yong Kwon and Professor Zonghoon Lee in the Department of Materials Science and Engineering at UNIST.
Comments are closed.