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Nov 24, 2022

Atomic transistors based on seamless lateral metal-semiconductor junctions with sub-1-nm transfer length

Posted by in categories: computing, materials

A recent study, affiliated with South Korea’s Ulsan National Institute of Science and Technology (UNIST) has reported a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, namely PtTe2.

Developing cheaper, smaller, and better-performing semiconductors with other than (Si), is expected to gain , thanks to a recent study from UNIST. This will aid in reducing the space between semiconductors and metals within to ∼1 nm, which could help maintain .

Published in the August 2022 issue of Nature Communications, this study has been jointly led by Professor Soon-Yong Kwon and Professor Zonghoon Lee in the Department of Materials Science and Engineering at UNIST.

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