Feb 20, 2023

Two-dimensional oxides open door for high-speed electronics

Posted by in categories: computing, materials

Advances in computing power over the decades have come thanks in part to our ability to make smaller and smaller transistors, a building block of electronic devices, but we are nearing the limit of the silicon materials typically used. A new technique for creating 2D oxide materials may pave the way for future high-speed electronics, according to an international team of scientists.

“One way we can make our transistors, our , work faster is to shrink the distance electrons have to travel between point A and B,” said Joshua Robinson, professor of materials science and engineering at Penn State. “You can only go so far with 3D materials like silicon—once you shrink it down to a nanometer, its properties change. So there’s been a massive push looking at new materials, one of which are 2D materials.”

The team, led by Furkan Turker, graduate student in the Department of Materials Sciences, used a technique called confinement hetroepitaxy, or CHet, to create 2D oxides, materials with special properties that can serve as an atomically thin insulating layer between layers of electrically conducting materials.

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