Lifeboat Foundation

Researchers led by Giulia Galli at University of Chicago’s Pritzker School of Molecular Engineering report a computational study that predicts the conditions to create specific spin defects in silicon carbide. Their findings, published online in Nature Communications, represent an important step towards identifying fabrication parameters for spin defects useful for quantum technologies.

Electronic spin defects in semiconductors and insulators are rich platforms for quantum information, sensing, and communication applications. Defects are impurities and/or misplaced atoms in a solid and the electrons associated with these atomic defects carry a spin. This quantum mechanical property can be used to provide a controllable qubit, the basic unit of operation in quantum technologies.

Yet the synthesis of these spin defects, typically achieved experimentally by implantation and annealing processes, is not yet well understood, and importantly, cannot yet be fully optimized. In silicon carbide —an attractive host material for spin qubits due to its industrial availability—different experiments have so far yielded different recommendations and outcomes for creating the desired spin defects.

Researchers at the Indian Institute of Science (IISc) have developed a fully indigenous gallium nitride (GaN) power switch that can have potential applications in systems like power converters for electric vehicles and laptops, as well as in wireless communications. The entire process of building the switch—from material growth to device fabrication to packaging—was developed in-house at the Center for Nano Science and Engineering (CeNSE), IISc.

Due to their high performance and efficiency, GaN transistors are poised to replace traditional silicon-based transistors as the building blocks in many electronic devices, such as ultrafast chargers for electric vehicles, phones and laptops, as well as space and military applications such as radar.

“It is a very promising and disruptive technology,” says Digbijoy Nath, Associate Professor at CeNSE and corresponding author of the study published in Microelectronic Engineering. “But the material and devices are heavily import-restricted … We don’t have gallium nitride wafer production capability at commercial scale in India yet.” The know-how of manufacturing these devices is also a heavily-guarded secret with few studies published on the details of the processes involved, he adds.

Ibrahim Can/Interesting Engineering.

This summer, we reported that Sansone was awarded the first prize, and winnings of $75,000, at this year’s Regeneron International Science and Engineering Fair (ISEF), the world’s largest international high school STEM competition.

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A new Boston Dynamics office in Frankfurt, Germany will provide sales, services, and field engineering support for European customers.

The study’s authors compared the influence of two components of the brain’s physical structure: the outer folds of the cerebral cortex — the area where most higher-level brain activity occurs — and the connectome, the web of nerves that links distinct regions of the cerebral cortex. The team found that the shape of the outer surface was a better predictor of brainwave data than was the connectome, contrary to the paradigm that the connectome has the dominant role in driving brain activity. “We use concepts from physics and engineering to study how anatomy determines function,” says study co-author James Pang, a physicist at Monash University in Melbourne, Australia.

A model of the brain’s geometry better explains neuronal activity than a model based on the ‘connectome’.

Today, we are living in the midst of a race to develop a quantum computer, one that could be used for practical applications. This device, built on the principles of quantum mechanics, holds the potential to perform computing tasks far beyond the capabilities of today’s fastest supercomputers. Quantum computers and other quantum-enabled technologies could foster significant advances in areas such as cybersecurity and molecular simulation, impacting and even revolutionizing fields such as online security, drug discovery and material fabrication.

An offshoot of this technological race is building what is known in scientific and engineering circles as a “quantum simulator”—a special type of quantum computer, constructed to solve one equation model for a specific purpose beyond the computing power of a standard computer. For example, in medical research, a quantum simulator could theoretically be built to help scientists simulate a specific, complex molecular interaction for closer study, deepening scientific understanding and speeding up drug development.

But just like building a practical, usable quantum computer, constructing a useful quantum simulator has proven to be a daunting challenge. The idea was first proposed by mathematician Yuri Manin in 1980. Since then, researchers have attempted to employ trapped ions, cold atoms and superconducting qubits to build a quantum simulator capable of real-world applications, but to date, these methods are all still a work in progress.

A genetically engineered marine microorganism is shown to break down polyethylene terephthalate (PET) in saltwater. This plastic, used in everything from water bottles to clothing, is a significant contributor to microplastic pollution in oceans.

“This is exciting because we need to address plastic pollution in marine environments,” says Nathan Crook, corresponding author of a paper on the work and an assistant professor of chemical and biomolecular engineering at North Carolina State University.

Femtotech: Computing at the femtometer scale using quarks and gluons.
How the properties of quarks and gluons can be used (in principle) to perform computation at the femtometer (10^−15 meter) scale.

I’ve been thinking on and off for two decades about the possibility of a femtotech. Now that nanotech is well established, and well funded, I feel that the time is right to start thinking about the possibility of a femtotech.

Continue reading “Hugo de Garis — Innovating Beyond the Nanoscale, Femtometer Scale Technology” »